Unfortunately, for a cell in operation, it is not as "easy" to develop
a fully coupled thermo-electro-mechanical model as it was possible
to do for a cell in its preheat phase [5,6], relatively speaking of
course!
The added difficulties are coming from the added presence of the
liquid zone where a lot of extra physics take place. The main
impact of the vertical potshell deformation is the generation of a
drastically longitudinally varying metal pad thickness. This
variation in the metal pad thickness have an impact on the local
sludge accumulation in the two ends that will have an impact on the
local electrical resistance above the cathode that will have an
impact on the longitudinal collector bars current pickup. All this
drastically affects the MHD cell stability characteristic of the cell.
In the absence of a complex CFD component, it is not possible to
model that complete interaction, but as a first step, it is possible to
take into account some effects of the vertical potshell deformation
in the MHD cell stability model.
Weakly coupled mechanical and MHD models
As demonstrated in [7], the metal pad horizontal current density
has a strong influence on the MHD cell stability and the intensity of
that horizontal current density is directly proportional to the metal
pad thickness. With a vertically deformed potshell, there is a strong
longitudinal variation of that horizontal current density even for the
"static" bath/metal interface configuration.
A new version of MHD-Valdis cell stability model has been
developed to take into account the longitudinal deformation of the
cathode block surface as computed by the mechanical model [2]
and hence take into account the strongly varying metal pad
thickness and corresponding horizontal current density on the non-
linear MHD cell stability analysis.
500 kA demonstration cell
The computed vertical potshell deformation for the base case (no
cooling fins and no forced convection) 500 kA demonstration cell
is presented in Figure 9 of [2]. There is about a 2.25 cm difference
between the maximum potshell floor surface elevation at the center
of the cell and the minimum elevation at the two ends.
In the present work, it is assumed that the relative vertical
displacement of the cathode block top surface is identical to the
computed relative vertical displacement of the potshell floor and
that the vertical cathode block surface displacement is uniform
along the width of the cell because there is no data available at this
time to justify to do otherwise. Yet, it is important to notice that
this is not a limitation of the new MHD-Valdis model extension
that could accept any types of X-Y variable vertical surface
topology, like a cathode surface erosion profile for example.
Figure 1. Metal pad bottom profile input
Figure 1 presents the metal pad bottom that has been input to the
extended MHD-Valdis model based on the base case vertical
displacement presented in Figure 9 of [2].
Before comparing the bath/metal interface oscillation evolution
before and after considering the new bottom profile input, it is
worth specifying that the 500 kA busbar design used in the present
work is the one presented in Figure 1 of [8]. The base case 4.5 cm
ACD, 20 cm metal pad thickness and flat bottom profile bath/metal
interface oscillation evolution is presented in Figure 2. This type of
oscillation evolution is characteristic of a stable cell prediction. The
figure compares the results obtained with the updated MHD-Valdis
model version using a flat bottom input with the results obtained
using the previous MHD-Valdis version [8]. They are of course
virtually identical.
Figure 2. The comparison of the MHD-VALDIS results before and
after the variable bottom upgrade.
Figure 3 compares the bath/metal interface oscillation evolution of
the same base case with flat bottom profile with the one predicted
when using the bottom profile presented in Figure 1. Figure 4
compares the Fourier power spectra of the two interface waves
presented in Figure 3. Results indicate that the latter case is
predicted to be less stable than the base case.
Figure 3. The comparison of the MHD-VALDIS results with and
without up to 2.25 cm of vertical displacement.
Figure 4. Effect of the vertical displacement (max 2.25 cm) on the
interface wave Fourier power spectra.